Scalable synthesis of n-type Mg3Sb2-xBix for thermoelectric applications

被引:52
作者
Xu, C. [1 ,2 ]
Liang, Z. [1 ,2 ]
Shang, H. [1 ,2 ,3 ,4 ]
Wang, D. [1 ,2 ]
Wang, H. [1 ,2 ]
Ding, F. [3 ,4 ]
Mao, J. [1 ,2 ]
Ren, Z. [1 ,2 ]
机构
[1] Univ Houston, Dept Phys, Houston, TX 77204 USA
[2] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
[3] Chinese Acad Sci, Key Lab Appl Superconduct, Beijing 100190, Peoples R China
[4] Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China
关键词
Thermoelectric; Mg3Sb2-Bi-x(x); Scalable synthesis; Power generation; FIGURE-OF-MERIT; ZINTL COMPOUNDS; WASTE HEAT; PERFORMANCE; POWER; SCATTERING; EFFICIENCY; MG3SB2;
D O I
10.1016/j.mtphys.2020.100336
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The highly efficient n-type Mg3Sb2-Bi-x(x) thermoelectric materials hold great promise for application in power generation as well as refrigeration. Currently, n-type Mg3Sb2-Bi-x(x) compounds with high zTs can be easily reproduced on a laboratory scale with similar to 10 g per batch. However, scaling up the synthesis of Mg3Sb2-Bi-x(x) with uniform high thermoelectric performance, which is critical for promoting this compound for practical applications, has yet to be achieved. Here we report a scalable preparation method based on Simoloyer ball-milling, which allows us to obtain over 1 kg Mg3.1Sb1.5Bi0.49Te0.01 powder in a single batch. Subsequently, samples with different diameters (ranging from a half inch to two inches) were successfully prepared and their thermoelectric performance was found to be comparable. In addition, a two-inch sample was sectioned into several parts, and the thermoelectric properties of the separate parts are also similar, indicating the high uniformity of the prepared large-scale sample. Importantly, the single-leg Mg3.1Sb1.5Bi0.49Te0.01 attains a high energy conversion efficiency of similar to 12.9% under a temperature difference of similar to 480 K at the hot-side temperature of 773 K. This study represents a step toward the practical application of Mg3Sb2-Bi-x(x) for thermoelectric power generation. (C) 2020 Elsevier Ltd. All rights reserved.
引用
收藏
页数:9
相关论文
共 54 条
[1]   Cooling, heating, generating power, and recovering waste heat with thermoelectric systems [J].
Bell, Lon E. .
SCIENCE, 2008, 321 (5895) :1457-1461
[2]   Extraordinary thermoelectric performance in n-type manganese doped Mg3Sb2 Zintl: High band degeneracy, tuned carrier scattering mechanism and hierarchical microstructure [J].
Chen, Xiaoxi ;
Wu, Haijun ;
Cui, Juan ;
Xiao, Yu ;
Zhang, Yang ;
He, Jiaqing ;
Chen, Yue ;
Cao, Jian ;
Cai, Wei ;
Pennycook, Stephen J. ;
Liu, Zihang ;
Zhao, Li-Dong ;
Sui, Jiehe .
NANO ENERGY, 2018, 52 :246-255
[3]   Thermoelectric cooling and power generation [J].
DiSalvo, FJ .
SCIENCE, 1999, 285 (5428) :703-706
[4]   High efficiency Mg2(Si,Sn)-based thermoelectric materials: scale-up synthesis, functional homogeneity, and thermal stability [J].
Farahi, Nader ;
Stiewe, Christian ;
Truong, D. Y. Nhi ;
de Boor, Johannes ;
Mueller, Eckhard .
RSC ADVANCES, 2019, 9 (40) :23021-23028
[5]   Advances in thermoelectric materials research: Looking back and moving forward [J].
He, Jian ;
Tritt, Terry M. .
SCIENCE, 2017, 357 (6358)
[6]   Improved thermoelectric performance of n-type half-Heusler MCo1-xNixSb (M = Hf, Zr) [J].
He, Ran ;
Zhu, Hangtian ;
Sun, Jingying ;
Mao, Jun ;
Reith, Heiko ;
Chen, Shuo ;
Schierning, Gabi ;
Nielsch, Kornelius ;
Ren, Zhifeng .
MATERIALS TODAY PHYSICS, 2017, 1 :24-30
[7]   When thermoelectrics reached the nanoscale [J].
Heremans, Joseph P. ;
Dresselhaus, Mildred S. ;
Bell, Lon E. ;
Morelli, Donald T. .
NATURE NANOTECHNOLOGY, 2013, 8 (07) :471-473
[8]   Exceptional thermoelectric performance in Mg3Sb0.6Bi1.4 for low-grade waste heat recovery [J].
Imasato, Kazuki ;
Kang, Stephen Dongmin ;
Snyder, G. Jeffrey .
ENERGY & ENVIRONMENTAL SCIENCE, 2019, 12 (03) :965-971
[9]   Improving the thermoelectric performance in Mg3+xSb1.5Bi0.49Te0.01 by reducing excess Mg [J].
Imasato, Kazuki ;
Ohno, Saneyuki ;
Kang, Stephen Dongmin ;
Snyder, G. Jeffrey .
APL MATERIALS, 2018, 6 (01)
[10]  
Ioffe A.F., 1956, SEMICONDUCTOR THERMO, P96