Dependency of reactive magnetron-sputtered SiC film quality on the deposition parameters

被引：9

作者：

Mahmood, A

Muhl, S

Sansores, LE

Andrade, E

机构：

[1] Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico

[2] Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 04510, DF, Mexico

来源：

THIN SOLID FILMS | 2000年 / 373卷 / 1-2期

关键词：

silicon carbide; RF reactive magnetron sputtering;

D O I：

10.1016/S0040-6090(00)01130-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SiC thin films have been prepared by using RF reactive magnetron sputtering (RF-RMS). The deposition parameters have been varied over a wide range to optimize the quality of the films; substrate temperature from 700 to 1000 degreesC, Ar/CH4 composition from 80:20 to 50:50 and RF power from 100 to 200 W. The samples have been characterized by X-ray diffraction, Rutherford backscattering, profilometry, FTIR spectroscopy and ellipsometry. The results show that good quality silicon carbide films can be prepared by using the RF-RMS technique. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：180 / 183

页数：4