A Novel High Latch-Up Immunity Electrostatic Discharge Protection Device for Power Rail in High-Voltage ICs

被引：4

作者：

Zhang, Chunwei ^{[1
]}

Liu, Siyang ^{[1
]}

Xu, Kaikai ^{[2
]}

Wei, Jiaxing ^{[1
]}

Ye, Ran ^{[1
]}

Sun, Weifeng ^{[1
]}

Su, Wei ^{[3
]}

Zhang, Aijun ^{[3
]}

Ma, Shulang ^{[3
]}

Lin, Feng ^{[3
]}

Sun, Guipeng ^{[3
]}

机构：

[1] Southeast Univ, Natl Engn Res Ctr ASIC, Nanjing 210096, Jiangsu, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[3] CSMC Technol Corp, Wuxi 214000, Peoples R China

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2016年 / 16卷 / 02期

基金：

中国博士后科学基金;

关键词：

Electrostatic discharge; high voltage; holding voltage; latch-up immunity; power rail;

D O I：

10.1109/TDMR.2016.2544350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a novel high latch-up immunity electrostatic discharge protection device that can be equivalent to a PNP-type bipolar junction transistor (BJT) and a series-connected Zener diode is proposed. For the proposed device, the emitter of its BJT is formed by Zener implantation instead of conventional P-plus. In this way, the high latch-up immunity can be achieved by the Zener implantation dose and window designing. Meanwhile, the proposed device exhibits excellent voltage clamp capability and 2.2 times large second breakdown current as a generally used diode.

引用

页码：266 / 268

页数：3

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