Hysteresis loop and cross-talk of organic memristive devices

被引:11
作者
Dimonte, Alice [1 ]
Berzina, Tatiana [1 ]
Pavesi, Maura [2 ]
Erokhin, Victor [1 ]
机构
[1] CNR IMEM, Parma, Italy
[2] Univ Parma, Dept Phys & Earth Sci, I-43100 Parma, Italy
关键词
Organic memristor; Hysteresis loop; Cross-talk; Pathways; POLYANILINE; ELEMENTS; SYSTEMS;
D O I
10.1016/j.mejo.2014.09.009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Similarly to inorganic memristors, the organic memristive devices reveal a variation of the hysteresis loop upon the frequency of the applied bias voltage. The on/off ratio of the conductivity increases from 4 to 1000 Limes for the variation of time delay (equilibration after the application of the voltage increment) from 5 to 60 s. Being implemented in multi-element electrical circuits memristive devices provide a cross-talk, leading to an equilibration trend of the conductivity values. This effect is mainly related to the formation of stable signal pathways. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1396 / 1400
页数:5
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