The power of using automatic device optimization, based on iterative device simulations, in design of high-performance devices

被引:3
作者
Bertilsson, K [1 ]
Nilsson, HE
机构
[1] Mid Sweden Univ, Dept Informat Technol & Media, SE-85170 Sundsvall, Sweden
[2] KTH Royal Inst Technol, Dept Solid State Elect, SE-16440 Kista, Sweden
关键词
device simulation; optimization; SiC; MESFET;
D O I
10.1016/j.sse.2004.05.062
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An automatic optimization tool for semiconductor devices based on iterative device simulations is developed. The tool is used for optimization of different kinds of semiconductor devices using various performance measures. High performance optimization algorithms, both local and global, are used to achieve an efficient design in shortest possible time. In this paper the effects of different optimization algorithms, performance measures, and number of variables in the optimization are studied. Both the computational efficiency and the devices achieved with different performance measures are studied. We give a demonstration of the usefulness of this method in a comparison between different device topologies, which have been optimized for best performance. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1721 / 1725
页数:5
相关论文
共 7 条
[1]  
Allen ST, 1999, IEEE MTT-S, P321, DOI 10.1109/MWSYM.1999.779484
[2]  
[Anonymous], 1988, Microwave Solid State Circuit Design
[3]  
*AV CORP, 2001, TCAD BUS UN MED 2 DI
[4]   Numerical simulation of small-signal microwave performance of 4H-SIC MESFET [J].
Huang, MW ;
Mayergoyz, ID ;
Goldsman, N .
SOLID-STATE ELECTRONICS, 2000, 44 (07) :1281-1287
[5]   VERY FAST SIMULATED RE-ANNEALING [J].
INGBER, L .
MATHEMATICAL AND COMPUTER MODELLING, 1989, 12 (08) :967-973
[6]   A SIMPLEX-METHOD FOR FUNCTION MINIMIZATION [J].
NELDER, JA ;
MEAD, R .
COMPUTER JOURNAL, 1965, 7 (04) :308-313
[7]   Electron mobility models for 4H, 6H, and 3C SiC [J].
Roschke, M ;
Schwierz, F .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (07) :1442-1447