Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001)

被引：128

作者：

Schewski, Robert ^{[1
]}

Wagner, Guenter ^{[1
]}

Baldini, Michele ^{[1
]}

Gogova, Daniela ^{[1
]}

Galazka, Zbigniew ^{[1
]}

Schulz, Tobias ^{[1
]}

Remmele, Thilo ^{[1
]}

Markurt, Toni ^{[1
]}

von Wenckstern, Holger ^{[2
]}

Grundmann, Marius ^{[2
]}

Bierwagen, Oliver ^{[3
]}

Vogt, Patrick ^{[3
]}

Albrecht, Martin ^{[1
]}

机构：

[1] Leibniz Inst Kristallzuchtung, D-12489 Berlin, Germany

[2] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 01期

关键词：

THIN-FILM; GROWTH; PHASE; BETA-GA2O3; AL2O3; SN;

D O I：

10.7567/APEX.8.011101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heteroepitaxial Ga2O3 was grown on c-plane sapphire by molecular beam epitaxy, pulsed-laser deposition, and metalorganic Chemical vapor deposition. Investigation by scanning transmission electron microscopy (STEM) revealed the presence of a three-monolayer-thick pseudomorphically grown layer of trigonal alpha-Ga2O3 at the interface between the c-plane sapphire substrate and the beta-Ga2O3 independent of the growth method. On top of this pseudomorphically grown layer, plastically relaxed monoclinic beta-Ga2O3 grew in the form of rotational domains. We rationalize the stable growth of the high-pressure trigonal alpha-phase of Ga2O3 in terms of the stabilization of the alpha-Ga2O3 phase by the latticemismatch-induced strain. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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