Fabrication and characteristics of ZnO MOS capacitors with high-K HfO2 gate dielectrics

被引：2

作者：

Han DeDong ^{[1
]}

Wang Yi ^{[1
]}

Zhang ShengDong ^{[1
]}

Sun Lei ^{[1
]}

Kang JinFeng ^{[1
]}

Liu XiaoYan ^{[1
]}

Du Gang ^{[1
]}

Liu LiFeng ^{[1
]}

Han RuQi ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

SCIENCE CHINA-TECHNOLOGICAL SCIENCES | 2010年 / 53卷 / 09期

基金：

中国国家自然科学基金;

关键词：

ZnO; high-K; HfO2; low temperature process;

D O I：

10.1007/s11431-010-4044-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO thin films are first deposited on n-type silicon by radio frequency (rf) magnetron sputtering at room temperature. And high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor (MOS) capacitors. The temperature to fabricate ZnO MOS capacitors is 400A degrees C, and the low temperature process is applicable for thin film transistors, flat-panel display (FPD), flexible display, etc. The electronic availability of ZnO thin films, which serve as a semiconductor material for MOS capacitors with HfO2 gate dielectric is investigated. High frequency (1 MHz) capacitance-voltage (C-V) and current-voltage (I-V) characteristics of ZnO-based MOS capacitors are measured. The thermal stability and electronic stability of the ZnO capacitors are investigated, respectively. Experimental results indicate that good electrical characteristics can be obtained on ZnO substrates with high-K HfO2 gate dielectrics. Besides, the ZnO capacitors can exhibit high thermal and electronic stabilities.

引用

页码：2333 / 2336

页数：4

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