Binding Energy of Hydrogenic Impurity States in an Inverse Parabolic Quantum Well Under Electric and Magnetic Fields Parallel to the Growth Direction

In the present theoretical study we investigate the influence of external fields (electric and magnetic) on the binding energy of hydrogenic impurities in a GaAs/Ga1-xAlxAs inverse parabolic quantum well. Our calculations have been based on the potential morphing method in the effective mass approximation. Concerning the behavior of the binding energy as a function of the impurity position, the existence of the electric field causes an asymmetry on the binding energy, which is stronger for intermediate confinements. Furthermore, as our results indicate the binding energy depends strongly on the different Al concentrations at the well center, the length of the quantum well as well as on the magnetic field.