Improved BSIM3v3 model for RF MOSFET IC simulation

被引：1
作者：
Lee, S
Kim, CS
Yu, HK
机构：
[1] Hankuk Univ Foreign Studies, Dept Elect Engn, Yongin 449791, Kyungki Do, South Korea
[2] Elect & Telecommun Res Inst, Microelect Technol Lab, Yusong Gu, Taejon 305606, South Korea
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 21期
关键词：
D O I：
10.1049/el:20001280
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved BSIM3v3 RF model including external junction diodes to a conventional substrate network is proposed. This model results in much better agreements with the measured output resistance and capacitance than other published models. The accuracy of the model is also demonstrated by observing good agreement between the measured and modelled S-parameters up to 10GHz.
引用
收藏
页码：1818 / 1819
页数：2
相关论文
共 8 条
[1]   Extended complex RBF and its application to M-QAM in presence of co-channel interference [J].
Lee, KY ;
Jung, SW .
ELECTRONICS LETTERS, 1999, 35 (01) :17-19
[2]   A semianalytical parameter extraction of a SPICE BSIM3v3 for RF MOSFET's using S-parameters [J].
Lee, S ;
Yu, HK .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (03) :412-416
[3]   Effects of pad and interconnection parasitics on forward transit time in HBT's [J].
Lee, SH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (02) :275-280
[4]   rf MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model [J].
Liu, W ;
Gharpurey, R ;
Chang, MC ;
Erdogan, U ;
Aggarwal, R ;
Mattia, JP .
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :309-312
[5]  
OU JJ, 1998, 1998 S VLSI TECHN, P94
[6]   High-frequency application of MOS compact models and their development for scalable RF model libraries [J].
Pehlke, DR ;
Schroter, M ;
Burstein, A ;
Matloubian, M ;
Chang, MF .
IEEE 1998 CUSTOM INTEGRATED CIRCUITS CONFERENCE - PROCEEDINGS, 1998, :219-222
[7]  
*SILV INT, 1997, UTMOST 3 EXTR MAN
[8]  
Tin SF, 1999, PROCEEDINGS OF THE IEEE 1999 CUSTOM INTEGRATED CIRCUITS CONFERENCE, P583, DOI 10.1109/CICC.1999.777349
1