Effect of gate-dielectrics on the electrical characteristics of solution-processed single-wall-carbon-nanotube thin-film transistors

High performance of solution-processed, single-wall-carbon-nanotube (SWCNT) thin-film transistors (TFTs) is investigated through the use in the different gatedielectrics of silicon dioxide (SiO2), silicon nitride (SiNx), the bilayers of SiO2 and SiNx, and hexagonal boron-nitride (h-BN) thin films. The different interfacial characteristics affect the electrical characteristics of the SWCNT-TFTs including key device metrics. Significantly, the hysteresis window that is normally observed in drop-casted SWCNT-TFTs was majorly suppressed by the employment of a thin lower dielectric-constant material on a higher dielectricconstant material. Sub-2V operating SWCNT-TFTs with solution-processed h-BN gate dielectrics with good above- and sub-threshold characteristics are also investigated on the basis of interfacial characteristics underlying the device physics. Such performance can be realized by the suppressed interfacial impurity scattering through the chemically clean interface combined with optimized solution-process below 100 A degrees C.