Multiwafer gas source MBE development for InGaAsP/InP laser production

被引：4
作者：
Lelarge, F
Sanchez, JJ
Gaborit, F
Gentner, JL
机构：
[1] ALCATEL, CIT, F-91460 Marcoussis, France
[2] ALCATEL OPTRON, F-91620 Nozay, France
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期
关键词：
multiwafer growth; gas source molecular beam epitaxy; semiconducting III-V materials; InGaAsP/InP lasers;
D O I：
10.1016/S0022-0248(02)02283-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We studied in details the interplay between various key elements required for multiwafer gas source molecular beam epitaxy (GSMBE) such as gas cell. cracking efficiency, group-III and -V uniformity, pumping system capacity and pyrometer control of growth temperature. We demonstrate the compatibility of the accurate and reproducible control of GaxIn1-xAsyP1-y alloys of GSMBE process with large-scale 1.55 mum telecom laser production. Excellent photoluminescence (PL) wavelength uniformity is obtained in 4 x 2 in configuration. Standard deviation of PL wavelength is smaller than 0.5 nm over the-entire surface of the four wafers. Extension of multiwafer growth to heterostructures lasing at shorter wavelength is also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：130 / 134
页数：5
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