Degradation of laser-crystallized laterally grown poly-Si TFT under dynamic stress

被引：6

作者：

Liu, Po-Tsun ^{[1
]}

Lu, Hau-Yan

Chen, Yu-Cheng

Chi, Sien

机构：

[1] Natl Tsing Hua Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Display Inst, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 05期

关键词：

dynamic stress; poly-Si; protrusion grain boundary; thin-film transistor TFT;

D O I：

10.1109/LED.2007.895388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter studies the electrical degradation of laterally grown polycrystalline silicon thin-film transistors (poly-Si TFTs) under dynamic voltage stress. The experimental results show them serious electrical degradation of poly-Si TFTs with a protruding grain boundary. The concentration of the electric field in the protrusion region was verified by capacitance-voltage measurements and simulation of the device characteristics. These results reveal that more electrons are induced at the grain boundary of the poly-Si channel because of the relatively high electric field in the protrusion region. Based on these data, this letter proposes a model to explain the enhanced electrical degradation of poly-Si TFTs with a protruding grain boundary, generated by laser-crystallized lateral growth technique.

引用

页码：401 / 403

页数：3

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