Effect of the substrate temperature on zirconium oxynitride thin films deposited by water vapour-nitrogen radiofrequency magnetron sputtering

被引：16
|
作者：
Signore, M. A. [1 ]
Rizzo, A. [1 ]
Tapfer, L. [1 ]
Piscopiello, E. [1 ]
Capodieci, L. [1 ]
Cappello, A. [1 ]
机构：
[1] ENEA, UTS FIM, CR Brindisi, I-72100 Brindisi, Italy
来源：
THIN SOLID FILMS | 2010年 / 518卷 / 08期
关键词：
Zirconium oxynitride; Atomic Force Microscopy; X-ray diffraction; Secondary Ion Mass Spectrometry; Transmission Electron Microscopy; Magnetron sputtering; NITRIDATION; HYDROGEN;
D O I：
10.1016/j.tsf.2009.07.153
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZrNx films were deposited by radiofrequency reactive magnetron sputtering technique in nitrogen and water vapour atmosphere varying the working temperature from room temperature to 600 degrees C. The films' physical properties were investigated using X-ray diffraction, Secondary Ion Mass Spectroscopy, Atomic Force Microscopy and Transmission Electron Microscopy. It was found that the increase of temperature caused a decrease in the oxygen incorporation and a transition from cubic phase Of Zr2ON2 to ZrN one. The formation of nanosized crystalline particles dispersed in the amorphous matrix was observed. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1943 / 1946
页数：4
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