Ultraviolet and visible spectroscopic measurements were used to investigate prepared undoped and Mn-doped sodium phosphate glasses before and after successive gamma irradiation. The effects of both glass composition and MnO2 content on the generation of radiation-induced defects were investigated. Undoped sodium phosphate glass shows strong UV absorption, which is attributed to the presence of trace iron impurities present in the raw materials. Mn-doped glasses reveal an additional visible broad band centered at about 500 nm due to Mn3+, which has recently been related to the 5Eg 5T2g transition. The radiation-induced bands are correlated with the generation of liberated electron-hole pairs during the process of gamma irradiation and the possibility of photochemical reactions especially with trace iron impurities and manganese ions. The intensity and the position of the induced bands are observed to depend on the type and composition of glass, concentration of the dopant and also on the irradiation dose. Manganese ions when present in relatively higher content have been found to show a shielding behavior towards the effects of progressive gamma irradiation causing a retardation of the growth of the induced defects. Infrared and Raman spectra of the undoped and Mn-doped glasses were measured to investigate the structural phosphate groups present and the effect of MnO2 on the network structure. An ESR investigation was carried out to confirm the state of manganese ions in the prepared sodium phosphate glasses.
机构:
Sri Amaraavathi Coll Arts & Sci, Karur, Tamil Nadu, IndiaSri Amaraavathi Coll Arts & Sci, Karur, Tamil Nadu, India
Rajasekaran, S.
Muthuvel, A.
论文数: 0引用数: 0
h-index: 0
机构:
Bharathidasan Univ, TBML Coll, PG & Res Dept Phys, Tiruchirappalli 620024, Tamil Nadu, IndiaSri Amaraavathi Coll Arts & Sci, Karur, Tamil Nadu, India
Muthuvel, A.
Kannan, Karthik
论文数: 0引用数: 0
h-index: 0
机构:
Kumoh Natl Inst Technol, Sch Adv Mat & Engn, 61 Daehak Ro, Gyeongbuk 39177, South KoreaSri Amaraavathi Coll Arts & Sci, Karur, Tamil Nadu, India
Kannan, Karthik
Chinnaiah, K.
论文数: 0引用数: 0
h-index: 0
机构:
Kalasalingam Acad Res & Educ, Sch Adv Sci, Dept Phys, Virudunagar 626126, Tamil Nadu, IndiaSri Amaraavathi Coll Arts & Sci, Karur, Tamil Nadu, India
Chinnaiah, K.
Maik, Vivek
论文数: 0引用数: 0
h-index: 0
机构:
SRM Inst Sci & Technol, Dept Elect & Commun Engn, Kattankulathur Campus, Chennai, Tamil Nadu, IndiaSri Amaraavathi Coll Arts & Sci, Karur, Tamil Nadu, India
Maik, Vivek
Gohulkumar, M.
论文数: 0引用数: 0
h-index: 0
机构:
Vivekanandha Coll Arts & Sci Women Autonomous, PG & Res Dept Phys, Namakkal 637205, Tamil Nadu, IndiaSri Amaraavathi Coll Arts & Sci, Karur, Tamil Nadu, India
Gohulkumar, M.
Gurushankar, K.
论文数: 0引用数: 0
h-index: 0
机构:
Kalasalingam Acad Res & Educ, Sch Adv Sci, Dept Phys, Virudunagar 626126, Tamil Nadu, India
South Ural State Univ, Higher Med & Biol Sch, Lab Computat Modeling Drugs, Chelyabinsk 454080, RussiaSri Amaraavathi Coll Arts & Sci, Karur, Tamil Nadu, India
机构:
Guilin Univ Elect Technol, Inst Optoelect, Guilin 541004, Guangxi, Peoples R China
Georgia So Univ, Dept Phys, Statesboro, GA 30460 USAGuilin Univ Elect Technol, Inst Optoelect, Guilin 541004, Guangxi, Peoples R China
He, Zhiyi
Ma, Li
论文数: 0引用数: 0
h-index: 0
机构:
Georgia So Univ, Dept Phys, Statesboro, GA 30460 USAGuilin Univ Elect Technol, Inst Optoelect, Guilin 541004, Guangxi, Peoples R China
Ma, Li
Wang, Xiaojun
论文数: 0引用数: 0
h-index: 0
机构:
Georgia So Univ, Dept Phys, Statesboro, GA 30460 USA
NE Normal Univ, Sch Phys, Changchun 130024, Peoples R ChinaGuilin Univ Elect Technol, Inst Optoelect, Guilin 541004, Guangxi, Peoples R China