Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing

被引:1
作者
Illgen, Ralf [1 ]
Flachowsky, Stefan [1 ]
Herrmann, Tom [1 ]
Klix, Wilfried [1 ]
Stenzel, Roland [1 ]
Feudel, Thomas [2 ]
Hoentschel, Jan [2 ]
Horstmann, Manfred [2 ]
机构
[1] Univ Appl Sci Dresden, Dept Elect Engn, D-01069 Dresden, Germany
[2] GLOBALFOUNDRIES Inc, D-01109 Dresden, Germany
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 01期
关键词
amorphisation; annealing; boron; boron compounds; elemental semiconductors; Ge-Si alloys; hole mobility; ion implantation; MOSFET; semiconductor doping; silicon; stress effects; ACTIVATION;
D O I
10.1116/1.3244578
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article shows the importance of source/drain extension dopant species on the performance of embedded silicon-germanium strained silicon on insulator p-metal oxide semiconductor field effect transistor (MOSFET) devices, in which the activation was done using only high temperature ultrafast annealing technologies. BF2 and boron were investigated as source/drain extension dopant species. In contrast to unstrained silicon p-MOSFETs, boron source/drain extension implantations enhance device performance significantly compared to devices with BF2 source/drain extension implantations. Measurements show a 30% mobility enhancement and lower external resistance for the devices with boron source/drain extension implantations. The reason for this lies in the amorphization nature of BF2 implantations. Remaining defects after implant annealing affect the stress transfer from the embedded silicon-germanium and the overall hole mobility which leads to the observed performance degradation. Furthermore, TCAD simulations reveal that the mobility degradation with BF2 source/drain extension implantations is equivalent to almost 36% strain relaxation of the embedded silicon-germanium.
引用
收藏
页码:C1I12 / C1I16
页数:5
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