Linearity of AlGaN/GaN HEMTs with Different Gate-to-Source Length

被引：1

作者：

Zhong, Yi-nan ^{[1
]}

Hsin, Yue-ming ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Taoyuan, Taiwan

来源：

2019 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2019) | 2019年

关键词：

GaN; linearity; gate-to-source length;

D O I：

10.1109/wipdaasia.2019.8760307

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, the performance of AlGaN/GaN HEMTs with different gate-to-source length (L-GS) and with a fixed distance of drain-to-source (L-DS) is presented. The increase in L-GS makes the source resistance (RS) increase. In general, the larger the resistance, the better the linearity and stability in the power amplifier, thereby these devices were used to study and compare the device characteristics. According to output 3rd order intercept (OIP3), there is no linear trend in the linearity with related to the L-GS and R-S. The optimal layout for the different geometry in this study is the device with gate width of 250 mu m and LGS of 1.325 mu m.

引用

页数：3

共 5 条

[1] High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates [J].