A Ku-Band 40W GaN Power Amplifier MMIC for Satellite Communication

被引：2

作者：

Zhu, Shiquan ^{[1
]}

Liu, Yujie ^{[1
]}

Xiao, Zhilong ^{[1
]}

Huang, Lei ^{[1
]}

Wu, Qingzhi ^{[1
]}

Mao, Shuman ^{[1
]}

Wang, Huanpeng ^{[1
]}

Xu, Yuehang ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu, Peoples R China

来源：

2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP | 2022年

基金：

中国国家自然科学基金;

关键词：

GaN HEMT; Ku-band; high power amplifier; high linearity; Satellite communication;

D O I：

10.1109/IMWS-AMP54652.2022.10106822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Ku-band high power amplifier (HPA) MMIC is designed based on 0.15 mu m GaN HEMT process. To improve the HPA efficiency, a compact and concise 16-way power synthesis network is applied to reduce the insertion loss of match networks. Meanwhile, the optimal third-order intermodulation distortion (IMD3) impedance is taken into account to improve the linearity. The measured results under continuous wave (CW) excitation show that the power-added efficiency (PAE) is more than 36% with output power over 46dBm (40W) among 13-15.5 GHz, while the IMD3 is better than -24 dBc at 40dBm output power (two tones) back-off (PBO). The total chip size is 3.7x5.9mm(2).

引用

页数：3

共 7 条

[1]

[Anonymous], QORVO PART NUMBER TG

[2]

Hebei Semiconductor Research Institute, US

[3] Statistical Optimization for Geometric Estimation: Minimization vs. Non-minimization [J].

Kanatani, Kenichi .

2014 22ND INTERNATIONAL CONFERENCE ON PATTERN RECOGNITION (ICPR), 2014, :1-8

[4]

Nanjing Electronic Devices Institute, US

[5] A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs [J].

Wen, Zhang ;

Xu, Yuehang ;

Chen, Yongbo ;

Tao, Hongqi ;

Ren, Chunjiang ;

Lu, Haiyan ;

Wang, Zhensheng ;

Zheng, Weibin ;

Zhang, Bin ;

Chen, Tangsheng ;

Gao, Tao ;

Xu, Ruimin .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (12) :5113-5122

[6] Ku-Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz [J].

Yoshioka, Takaaki ;

Harauchi, Kenji ;

Sugitani, Takumi ;

Maehara, Hiroaki ;

Yamasaki, Takashi ;

Ichinohe, Hiroaki ;

Miyashita, Miyo ;

Yamamoto, Kazuya ;

Goto, Seiki .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021, 56 (09) :2635-2646

[7]

Zhang J., 2022, IEEE T CIRCUITS-II

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