A growth pathway for highly ordered quantum dot arrays

被引:44
作者
Liang, JY [1 ]
Luo, HL [1 ]
Beresford, R [1 ]
Xu, J [1 ]
机构
[1] Brown Univ, Div Engn, Providence, RI 02912 USA
关键词
D O I
10.1063/1.1834987
中图分类号
O59 [应用物理学];
学科分类号
摘要
To realize the desired zero-dimensional behavior of a quantum dot ensemble, the ability to fabricate quantum dots with a high packing density and a high degree of size, shape, and spacing uniformity is crucial. Here we report highly ordered InAs nanodot arrays grown by molecular-beam epitaxy on nonlithographically nanopatterned GaAs. Approximately 20 billion dots are grown in a 1 cm(2) area with the smallest size dispersion ever reported and forming a lateral superlattice in hexagonal dense packing form. These techniques presage a pathway to controlled growth of periodic quantum dot superstructures, which offer macroscopic spatial coherence in the interaction of quantum dots with radiation. (C) 2004 American Institute of Physics.
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页码:5974 / 5976
页数:3
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