A study on the modulation of the electrical transport by mechanical straining of individual titanium dioxide nanotube

被引：12

作者：

Asthana, A. ^{[1
]}

Shokuhfar, T. ^{[1
,2
]}

Gao, Q. ^{[1
]}

Heiden, P. ^{[3
]}

Friedrich, C. ^{[1
,2
]}

Yassar, R. S. ^{[1
]}

机构：

[1] Michigan Technol Univ, Dept Mech Engn Engn Mech, Houghton, MI 49931 USA

[2] Michigan Technol Univ, Multi Scale Technol Inst, Houghton, MI 49931 USA

[3] Michigan Technol Univ, Dept Chem, Houghton, MI 49931 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 07期

基金：

美国国家科学基金会;

关键词：

elastic limit; electrical conductivity; electron diffraction; electron-phonon interactions; metal-semiconductor-metal structures; scanning tunnelling microscopy; semiconductor materials; semiconductor nanotubes; titanium compounds; transmission electron microscopy; TIO2; CONDUCTION; ANATASE; FILMS; FIELD;

D O I：

10.1063/1.3466663

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report here, the deformation driven modulation of the electrical transport properties of an individual TiO2 nanotube via in situ transmission electron microscopy (TEM) using a scanning tunneling microscopy system. The current-voltage characteristics of each individual TiO2 nanotube revealed that under bending deformation within the elastic limit, the electrical conductivity of a TiO2 nanotube can be enhanced. High resolution TEM and electron diffraction pattern reveal that TiO2 nanotubes have tetragonal structure (a=0.378 nm, c=0.9513 nm, I4(1)/amd). Analysis based on a metal-semiconductor-metal model suggests that in-shell, surface defect-driven conduction modes and electron-phonon coupling effect are responsible for the modulated semiconducting behaviors. (C) 2010 American Institute of Physics. [doi:10.1063/1.3466663]

引用

页数：3

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