Coimplantation effects on the electrical properties of boron and aluminum acceptors in 4H-SiC

被引：28

作者：

Itoh, H

Troffer, T

Pensl, G

机构：

[1] Univ Erlangen Nurnberg, Inst Phys Appl, D-91058 Erlangen, Germany

[2] Japan Atom Energy Res Inst, Gunma 37012, Japan

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

ion implantation; C coimplantation; Si coimplantation electrical properties; boron acceptor; aluminum acceptor;

D O I：

10.4028/www.scientific.net/MSF.264-268.685

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of coimplantation of carbon (C) and boron (B)/aluminum (Al) or silicon (Si) and B/Al on the electrical activation of B/Al accepters in 4H-SiC was studied by Hall effect investigations. The free hole concentration is found to increase due to coimplantation of C/B or C/AI. Compared to it, coimplantation of Si/B or Si/Al reduces the free hole concentration. For room temperature-implantation, the optimum concentration of coimplanted C atoms is found to be [C]approximate to=1x10(18)/cm(3) for an implanted acceptor concentration of [B]=[Al]=5x10(18)/cm(3) A further increase of the free hole concentration is found by employing hot-implantation of C at 800 degrees C. The mechanisms, which alter the electrical properties of B/Al accepters due to C- or Si-coimplantation, are discussed.

引用

页码：685 / 688

页数：4