Carbon nanotube transistors with graphene oxide films as gate dielectrics

被引：26

作者：

Fu WangYang ^{[1
]}

Liu Lei ^{[1
]}

Wang WenLong ^{[1
]}

Wu MuHong ^{[1
]}

Xu Zhi ^{[1
]}

Bai XueDong ^{[1
]}

Wang EnGe ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2010年 / 53卷 / 05期

基金：

中国国家自然科学基金;

关键词：

carbon-based nanoelectronics; graphene oxide; gate dielectrics; MEMORY; TRANSPORT;

D O I：

10.1007/s11433-010-0179-x

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Carbon nanomaterials, including the one-dimensional (1-D) carbon nanotube (CNT) and two-dimensional (2-D) graphene, are heralded as ideal candidates for next generation nanoelectronics. An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide. Here, in analogy to the widespread use of silicon dioxide (SiO2) in silicon microelectronic industry, we report the proof-of-principle use of graphite oxide (GO) as a gate dielectrics for CNT field-effect transistor (FET) via a fast and simple solution-based processing in the ambient condition. The exceptional transistor characteristics, including low operation voltage (2 V), high carrier mobility (950 cm(2)/V-1 s(-1)), and the negligible gate hysteresis, suggest a potential route to the future all-carbon nanoelectronics.

引用

页码：828 / 833

页数：6

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