Lateral IMPATT diodes in standard CMOS technology

被引：9

作者：

Al-Attar, T ^{[1
]}

Mulligan, MD ^{[1
]}

Lee, TH ^{[1
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the use of a lateral IMPATT diode built in 0.25 mum CMOS technology as a high frequency power source. These diodes are monolithically integrated in coplanar waveguides and characterized by S-parameter measurements from 40 MHz to 110 GHz. These measurements show excellent agreement with predictions of theoretical models. To our knowledge, this is the first such structure built in a standard CMOS technology.

引用

页码：459 / 462

页数：4