High-voltage (>2.5kV) 4H-SiC Schottky rectifiers processed on hot-wall CVD and high-temperature CVD layers

被引：12
作者：
Kimoto, T [1 ]
Wahab, Q
Ellison, A
Forsberg, U
Tuominen, M
Yakimova, R
Henry, A
Janzen, E
机构：
[1] Linkoping Univ, IFM, S-58183 Linkoping, Sweden
[2] ABB Corp Res, S-72178 Vasteras, Sweden
[3] Outokumpu Semitr AB, S-17824 Ekero, Sweden
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
Schottky diode; high-power device; edge termination; on-resistance;
D O I：
10.4028/www.scientific.net/MSF.264-268.921
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-voltage Ni/4H-SiC Schottky rectifiers have been fabricated on thick low-doped epilayers grown by hot-wall chemical vapor deposition (CVD) or high-temperature CVD (HTCVD). A metal overlap onto an oxide layer was employed to reduce electric field crowding at the contact periphery. By utilizing a 42 mu m-thick epilayer doped to 1 similar to 2x10(15)cm(-3), a record blacking voltage of 3.0kV was achieved. The reverse leakage current was very low, 7x10(-7)A/cm(2) at -1.0kV (2.8kV diode). Specific on-resistance was 34m Omega cm(2) for a 3.0kV diode. A high breakdown voltage of 2.6kV was also attained for a diode processed on an HTCVD layer.
引用
收藏
页码：921 / 924
页数：4
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