Optical gain characteristics and excitonic nonlinearities in II-VI laser diodes

被引:1
作者
Michler, P
Vehse, M
Gutowski, J
Behringer, M
Hommel, D
Pereira, MF
Henneberger, K
机构
[1] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany
[2] Univ Rostock, D-18051 Rostock, Germany
关键词
semiconductors; optical properties; gain; lasing; excitonic nonlinearities; carrier-carrier interaction;
D O I
10.1016/S0022-0248(98)80120-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Gain characteristics and lasing of (Zn, Cd)Se/Zn(S, Se)/(Zn, Mg)(S, Se) separate confinement heterostructures are investigated by optical-gain spectroscopy and by high-excitation spectroscopy under quasi-stationary conditions. The optical gain is measured by means of the stripe-length method whereas excitonic bleaching under lasing conditions is analyzed through two-beam photoluminescence excitation (PLE) spectroscopy. At low lattice temperature, we find a rather low threshold density of 15-20 kW/cm(2) for both laser structures and the excitonic enhancement is still preserved at the onset of lasing. The red shift of the gain maximum with respect to the low-density PLE exciton peak increases with temperature. The results indicate a considerable influence of Coulomb correlations even at the high densities necessary for stimulated emission and are more adequately explained by a strongly correlated electron-hole plasma model that goes beyond the simple "excitonic lasing" concept. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:575 / 579
页数:5
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