Memristive technologies for data storage, computation, encryption, and radio-frequency communication

被引:394
作者
Lanza, Mario [1 ]
Sebastian, Abu [2 ]
Lu, Wei D. [3 ]
Le Gallo, Manuel [2 ]
Chang, Meng-Fan [4 ,5 ]
Akinwande, Deji [6 ]
Puglisi, Francesco M. [7 ]
Alshareef, Husam N. [1 ]
Liu, Ming [8 ]
Roldan, Juan B. [9 ]
机构
[1] King Abdullah Univ Sci & Technol KAUST, Phys Sci & Engn Div, Mat Sci & Engn Program, Thuwal 239556900, Saudi Arabia
[2] IBM Res Zurich, Ruschlikon, Switzerland
[3] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[4] Taiwan Semicond Mfg Co TSMC, Hsinchu, Taiwan
[5] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
[6] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78712 USA
[7] Univ Modena & Reggio Emilia, Dipartimento Ingn Enzo Ferrari, I-41125 Modena, Italy
[8] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[9] Univ Granada, Fac Ciencias, Dept Elect & Tecnol Computadores, Granada 18071, Spain
基金
欧洲研究理事会;
关键词
RANDOM NUMBER GENERATOR; RANDOM-ACCESS MEMORY; PHASE-CHANGE MEMORY; INTEGRATION; FILAMENTS; ARRAY; CMOS;
D O I
10.1126/science.abj9979
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non-von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.
引用
收藏
页码:1066 / +
页数:14
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