Optical properties of ZnxCd1-xS mixed-crystal thin film produced by PLD

被引:1
作者
Sakai, H [1 ]
Watanabe, M [1 ]
Takiyama, K [1 ]
Ullrich, B [1 ]
机构
[1] Hiroshima Kokusai Gakuin Univ, Fac Engn, Dept Elect Engn, Hiroshima 7390321, Japan
来源
THIRD INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION | 2003年 / 4830卷
关键词
CdS; ZnS; PLD; transmittance; XRD; optical band gap;
D O I
10.1117/12.486578
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thin film of ZnxCd1-xS mixed crystal is applicable to short-wavelength optical devices from visible to UV region because of various band gaps. Using the pulsed laser deposition (PLD) method, we first produced the ZnxCd1-xS mixed crystal thin films. The surface morphology, the composition x and the crystal structure of the thin films were observed with SEMI EDAX and XRD respectively. The lattice constant corresponding to (002) plane of hexagonal crystal linearly depends on x following the Vegard's law. The crystal grains of the ZnxCd1-xS thin films have the c-axis perpendicular to the film surface and good crystallinity. The optical transmittance was measured at room temperature so that the optical, band gaps of direct transition continuously increase from 2.43 eV (5 10 rim) to 3.63 eV (340 rim) with x. The continuous change of the band gap indicates solid solution formation.
引用
收藏
页码:270 / 273
页数:4
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