Electrical properties of deposited ZrO2 films on ZnO/n-Si substrates

被引：18
作者：
Chatterjee, S [1 ]
Nandi, SK
Maikap, S
Samanta, SK
Maiti, CK
机构：
[1] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India
[2] Seoul Natl Univ, Sch Mat Sci & Engn, Ctr Microstruct Sci Mat, Seoul 151742, South Korea
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 02期
关键词：
D O I：
10.1088/0268-1242/18/2/305
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical properties of microwave plasma deposited high dielectric constant (high-k) ZrO2 films on rf-sputtered polycrystalline ZnO films on n-Si have been studied. Capacitance-voltage (C-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics of metal insulator semiconductor (MIS) structures consisting of high-k ZrO2/n-Si have been measured. The fixed oxide charge density (Q(f)/q) and interface state density (D-jt,) are found to be 3.3 x 10(11) cm(-2) and 1.3 x 10(12) cm(-2) eV(-1), respectively. Charge trapping behaviour has also been studied under Fowler-Nordheim (FN) constant current stressing.
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页码：92 / 96
页数：5
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