Tuning the Performance of Negative Tone Electron Beam Resists for the Next Generation Lithography

被引：25

作者：

Lewis, Scott M. ^{[1
,2
,3
,4
]}

DeRose, Guy A. ^{[3
]}

Alty, Hayden R. ^{[1
,2
]}

Hunt, Matthew S. ^{[3
]}

Lee, Nathan ^{[3
]}

Mann, James A. ^{[1
,2
]}

Grindell, Richard ^{[4
]}

Wertheim, Alex ^{[3
]}

De Rose, Lucia ^{[3
]}

Fernandez, Antonio ^{[1
,2
]}

Muryn, Christopher A. ^{[1
,2
]}

Whitehead, George F. S. ^{[1
,2
]}

Timco, Grigore A. ^{[1
,2
]}

Scherer, Axel ^{[3
]}

Winpenny, Richard E. P. ^{[1
,2
,4
]}

机构：

[1] Univ Manchester, Dept Chem, Oxford Rd, Manchester M13 9PL, Lancs, England

[2] Univ Manchester, Photon Sci Inst, Oxford Rd, Manchester M13 9PL, Lancs, England

[3] CALTECH, Kavli Nanosci Inst, 1200 East Calif Blvd,107 81, Pasadena, CA 91125 USA

[4] Sci Tron Ltd, 34 High St, Walsall WS9 8LZ, W Midlands, England

来源：

ADVANCED FUNCTIONAL MATERIALS | 2022年 / 32卷 / 32期

基金：

“创新英国”项目; 英国工程与自然科学研究理事会;

关键词：

3D Monte Carlo Simulation; electron beam lithography; metal-organic electron beam resists; ASSEMBLIES; SML;

D O I：

10.1002/adfm.202202710

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new class of electron bean negative tone resist materials has been developed based on heterometallic rings. The initial resist performance demonstrates a resolution of 15 nm half-pitch but at the expense of a low sensitivity. To improve sensitivity a 3D Monte Carlo simulation is used that utilizes a secondary and Auger electron generation model. The simulation suggests that the sensitivity can be dramatically improved while maintaining high resolution by incorporating appropriate chemical functionality around the metal-organic core. The new resists designs based on the simulation have the increased sensitivity expected and illustrate the value of the simulation approach.

引用

页数：10

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