Sine-wave gating InGaAs/InP single photon detector with ultralow afterpulse

被引：48

作者：

He, De-Yong ^{[1
,2
,3
]}

Wang, Shuang ^{[1
,2
,3
]}

Chen, Wei ^{[1
,2
,3
]}

Yin, Zhen-Qiang ^{[1
,2
,3
]}

Qian, Yong-Jun ^{[1
,2
,3
]}

Zhou, Zheng ^{[1
,2
,3
]}

Guo, Guang-Can ^{[1
,2
,3
]}

Han, Zheng-Fu ^{[1
,2
,3
]}

机构：

[1] Univ Sci & Technol China, CAS Key Lab Quantum Informat, Hefei 230026, Peoples R China

[2] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Anhui, Peoples R China

[3] State Key Lab Cryptol, POB 5159, Beijing 100878, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 11期

基金：

中国国家自然科学基金;

关键词：

AVALANCHE PHOTODIODE;

D O I：

10.1063/1.4978599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sine-wave gating method is widely used in high-speed single photon detection (SPD) but shows extra afterpulse probability compared with the self-differencing technique. Here, we demonstrate that most extra afterpulses of the sine-wave gating SPD come from successive avalanche signals and distortion of electrical filters and also propose an effective method by removing the wider filtered avalanche signals to reduce the afterpulse probability. At 1 GHz gating frequency, the ultra-low afterpulse probability is characterized as 1.0% and 0.54% for a photon detection efficiency of 20.7% and 10.9%, respectively. Published by AIP Publishing.

引用

页数：4

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