Total reflection X-ray photoelectron spectroscopy: A review

被引：12
作者：
Kawai, Jun [1 ]
机构：
[1] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2010年 / 178卷
关键词：
Total reflection; X-ray photoelectron spectroscopy; Grazing incidence; Glancing incidence; SI WAFER SURFACE; PHOTOEMISSION-SPECTROSCOPY; ANGULAR-DISTRIBUTIONS; THICKNESS MEASUREMENTS; FLUORESCENCE ANALYSIS; OXIDIZED GAAS(100); ANGLE; MULTILAYER; SILICON; DIFFRACTION;
D O I：
10.1016/j.elspec.2009.12.001
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
Total reflection X-ray photoelectron spectroscopy (TRXPS) is reviewed and all the published papers on TRXPS until the end of 2009 are included. Special emphasis is on the historical development. Applications are also described for each report. The background reduction is the most important effect of total reflection, but interference effect, relation to inelastic mean free path, change of probing depth are also discussed. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：268 / 272
页数：5
相关论文
共 84 条
[61]  
Kawai J., 1995, ADV XRAY CHEM ANAL S, V26s, P97
[62]  
KAWAI J, 1996, J SURF ANAL, V2, P132
[63]  
KAWAI J, 1992, RIKEN ACCEL PROG REP, V26, P127
[64]   Soft X-ray absorption spectroscopy with variable surface sensitivity using fluorescence yield detection [J].
Kitajima, Y .
JOURNAL DE PHYSIQUE IV, 1997, 7 (C2) :705-706
[65]  
Kövér L, 2000, SURF INTERFACE ANAL, V29, P671, DOI 10.1002/1096-9918(200010)29:10<671::AID-SIA910>3.0.CO
[66]  
2-5
[67]   Optimization of a glancing angle for simultaneous trace elemental analysis by using a portable total reflection X-ray fluorescence spectrometer [J].
Kunimura, Shinsuke ;
Watanabe, Daisuke ;
Kawai, Jun .
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2009, 64 (03) :288-290
[68]  
Landree E, 2001, AIP CONF PROC, V550, P159, DOI 10.1063/1.1354390
[69]   Study of surface treatment of silicon wafer using small angle incident X-ray photoelectron spectroscopy [J].
Mayusumi, M ;
Imai, M ;
Takahashi, J ;
Kawada, K ;
Ohmi, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (06) :2235-2238
[70]   ANGULAR-DEPENDENT X-RAY PHOTOEMISSION STUDY OF OXIDIZED SILICON AT LOW X-RAY INCIDENCE ANGLES [J].
MEHTA, M ;
FADLEY, CS .
CHEMICAL PHYSICS LETTERS, 1977, 46 (02) :225-230
123456789