Phase-change annealing effects on electrical and optical properties of tin oxide thin films

被引：0

作者：

Srinivasan, V. S. Senthil ^{[2
]}

Patra, M. K. ^{[1
]}

Choudhary, V. S. ^{[1
]}

Mathew, M. ^{[1
]}

Pandya, A. ^{[1
]}

机构：

[1] Def R&D Org, Def Lab, Jodhpur 342011, Rajasthan, India

[2] Indian Inst Technol, Ctr Excellence Nanoelect, Bombay 400076, Maharashtra, India

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2010年 / 12卷 / 07期

关键词：

Electron-beam evaporation; Thin films; Annealing; Tin oxide; Orthorhombic; Phase change; Atomic Force Microscopy; Activation energy; HIGH-PRESSURE; SNO2;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The change from tetragonal to orthorhombic phase due to annealing also changes the electrical and optical properties of tin oxide thin films. X-ray diffraction and Atomic force microscopy studies reveal the changes in the phase and grain merger with annealing of as-grown tin oxide thin films. Optical bandgap increase with annealing confirms the improvement in the quality of film transparency. Electrical conductivity also shows an increasing trend with annealing. Parameters such as activation energy, optical bandgap, average roughness, and extinction coefficient have been determined and interpreted with respect to annealing.

引用

页码：1485 / 1489

页数：5

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