Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots

被引：142

作者：

Eich, Marius ^{[1
]}

Pisoni, Riccardo ^{[1
]}

Overweg, Hiske ^{[1
]}

Kurzmann, Annika ^{[1
]}

Lee, Yongjin ^{[1
]}

Rickhaus, Peter ^{[1
]}

Ihn, Thomas ^{[1
]}

Ensslin, Klaus ^{[1
]}

Herman, Frantisek ^{[2
]}

Sigrist, Manfred ^{[2
]}

Watanabe, Kenji ^{[3
]}

Taniguchi, Takashi ^{[3
]}

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Swiss Fed Inst Technol, Inst Theoret Phys, CH-8093 Zurich, Switzerland

[3] NIMS, Adv Mat Lab, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICAL REVIEW X | 2018年 / 8卷 / 03期

基金：

瑞士国家科学基金会;

关键词：

CARBON NANOTUBES; ELECTRONICS; DEVICES;

D O I：

10.1103/PhysRevX.8.031023

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers n = 1, 2,...50 can be filled successively into the quantum system with charging energies exceeding 10 meV. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of g(s) approximate to 2. In the low-field limit, the valley splitting depends linearly on the perpendicular magnetic field and is in qualitative agreement with calculations.

引用

页数：11

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