Effect of Ambient Humidity on the Electrical Conductivity of Polymorphic Ga2O3 Structures

被引：5

作者：

Almaev, A. V. ^{[1
]}

Nikolaev, V. I. ^{[2
,3
]}

Stepanov, S. I. ^{[2
,3
]}

Yakovlev, N. N. ^{[1
]}

Pechnikov, A. I. ^{[3
]}

Chernikov, E. V. ^{[1
]}

Kushnarev, B. O. ^{[1
]}

机构：

[1] Natl Res Tomsk State Univ, Tomsk 634050, Russia

[2] Perfect Crystals LLC, St Petersburg 194064, Russia

[3] Ioffe Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2021年 / 55卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

α -Ga2O3; ε polymorphic epitaxial films; chloride vapor-phase epitaxy; I– V characteristics; atmospheric humidity;

D O I：

10.1134/S1063782621030027

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of ambient humidity on the electrical conductivity of alpha-Ga2O3 and alpha-Ga2O3/epsilon-Ga2O3 is investigated. Polymorphic epitaxial Ga2O3 layers are deposited by the method of chloride vapor-phase epitaxy on sapphire substrates. The contacts are made of Pt and Pt/Ti. It is discovered that the I-V characteristics of the Pt/alpha-Ga2O3/Pt and Pt/Ti/alpha-Ga2O3/epsilon-Ga2O3/Ti/Pt structures have a high sensitivity to atmospheric humidity in the temperature range of 25-100 degrees C. It is found that the effect of water vapor on the I-V characteristics is reversible, and the most significant current changes in the samples are observed at a relative humidity of RH >= 60%. As the temperature rises, the effect of atmospheric humidity on the I-V characteristics decreases and disappears at temperatures of T > 100 degrees C. The experimental results obtained are explained within the framework of the Grotthuss mechanism.

引用

页码：346 / 353

页数：8

共 33 条

[1] β-Ga2O3 nanowires and thin films for metal oxide semiconductor gas sensors: Sensing mechanisms and performance enhancement strategies [J].