Large enhancement of the photovoltaic effect in ferroelectric complex oxides through bandgap reduction

被引:33
作者
An, Hyunji [1 ]
Han, Jun Young [2 ]
Kim, Bongjae [3 ,4 ]
Song, Jaesun [1 ]
Jeong, Sang Yun [1 ]
Franchini, Cesare [3 ,4 ]
Bark, Chung Wung [2 ]
Lee, Sanghan [1 ]
机构
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Gwangju 61005, South Korea
[2] Gachon Univ, Dept Elect Engn, Songnam 13120, South Korea
[3] Univ Vienna, Fac Phys, Waehringer Guertel 18, A-1090 Vienna, Austria
[4] Univ Vienna, Ctr Computat Mat Sci, Waehringer Guertel 18, A-1090 Vienna, Austria
基金
新加坡国家研究基金会; 奥地利科学基金会;
关键词
STABILITY;
D O I
10.1038/srep28313
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Tuning the bandgap in ferroelectric complex oxides is a possible route for improving the photovoltaic activity of materials. Here, we report the realization of this effect in epitaxial thin films of the ferroelectric complex oxide Bi3.25La0.75Ti3O12 (BLT) suitably doped by Fe and Co. Our study shows that Co (BLCT) doping and combined Fe, Co (BLFCT) doping lead to a reduction of the bandgap by more than 1 eV compared to undoped BLT, accompanied by a surprisingly more efficient visible light absorption. Both BLCT and BLFCT films can absorb visible light with a wavelength of up to 500 nm while still exhibiting ferroelectricity, whereas undoped BLT only absorbs UV light with a wavelength of less than 350 nm. Correlated with its bandgap reduction, the BLFCT film shows a photocurrent density enhanced by 25 times compared to that of BLT films. Density functional theory calculations indicate that the bandgap contraction is caused by the formation of new energy states below the conduction bands due to intermixed transition metal dopants (Fe, Co) in BLT. This mechanism of tuning the bandgap by simple doping can be applied to other wide-bandgap complex oxides, thereby enabling their use in solar energy conversion or optoelectronic applications.
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页数:7
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