Anderson and Stark localization in GaAs/(AlGa)As disordered superlattices

被引：0

作者：

Lorusso, GF ^{[1
]}

Tassone, F

Capozzi, V

Martin, D

Staehli, JL

机构：

[1] Ecole Polytech Fed Lausanne, Inst Phys Appl, PH Ecublens, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Inst Phys Theor, PH Ecublens, CH-1015 Lausanne, Switzerland

[3] Univ Bari, Dipartimento Fis, I-70126 Bari, Italy

[4] Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, PH Ecublens, CH-1015 Lausanne, Switzerland

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 23卷 / 01期

关键词：

disordered systems; quantum wells; electronic states (localized);

D O I：

10.1006/spmi.1996.0203

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Differences and analogies between disorder-induced localization and electric-field-induced localization are discussed. Calculations using a tight binding model and transfer matrix method for disordered superlattices are reported. Our results indicate the existence of residual structures in the energy spectrum of the disordered superlattices, which are absent in the Stark localization case. The residual structure in the Anderson localization case can be interpreted as arising from the presence of the neighboring of quantum wells with the same width and energy levels. (C) 1998 Academic Press Limited.

引用

页码：9 / 12

页数：4

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