Effect Of Al Doping On Thermoelectric Power Of Mg1-xAlxB2 Phonon Drag And Carrier Diffusion Contribution

被引：0

作者：

Singh, Namita ^{[1
]}

Sharma, Roopam ^{[1
]}

Khenata, R. ^{[2
]}

Varshney, Dinesh ^{[3
]}

机构：

[1] Ranchi Univ, Ranchi Coll, Dept Phys, Ranchi 834008, Jharkhand, India

[2] Univ Mascara, Dept Technol, Lab Phys Quant & Modelisat Math LPQ3M, Mascara 29000, Algeria

[3] Devi Ahilya Univ, Sch Phys, Vigyan Bhawan,Khandwa Rd Campus, Indore 452001, Madhya Pradesh, India

来源：

2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC-2017) | 2018年 / 1953卷

关键词：

Phonon drag; carrier diffusion; thermoelectric power; MgB2; ELECTRON;

D O I：

10.1063/1.5033069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The carrier diffusion contribution to the thermoelectric power (S-c(diff)) is calculated for MgB2, Mg0.9Al0.1B2 and Mg0.8Al0.2B2 within two energy gap method. The phonon drag thermoelectric power (S-ph(drag)) in normal state dominate and is an artifact of strong phonon-impurity and phonon scattering mechanism. The conductivity within the relaxation time approximation for pi and sigma band carriers has been taken into account ignoring a possible energy dependence of the scattering rates. Both these channels for heat transfer are clubbed to get total thermoelectric power (S-total) which starts departing from linear temperature dependence at about 150 K, before increasing at higher temperatures weakly. The anomalies reported are well accounted in terms of the scattering mechanism by phonon drag and carrier scattering with impurities, shows similar results as those revealed from experiments.

引用

页数：4

共 11 条

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