Calculation of boron segregation at the Si(100)/SiO2 interface

被引：4

作者：

Furuhashi, M ^{[1
]}

Hirose, T ^{[1
]}

Tsuji, H ^{[1
]}

Tachi, M ^{[1
]}

Taniguchi, K ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect & Informat Syst, Osaka 5650871, Japan

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2004年 / 27卷 / 1-3期

关键词：

D O I：

10.1051/epjap:2004136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The stability of B atom near the Si(100)/SiO2 interface during annealing is studied by using ab initio calculation to investigate the atomic scale mechanism of B segregation at the Si(100)/SiO2 interface. Contrary to the experimental observations showing that B atoms segregate into SiO2, B atoms are found to be stable in Si free of defects. But authors can rephrase differently this sentence. On the other hand, when an O vacancy exists in SiO2, the B atom is trapped by the O vacancy and becomes quite stable in SiO2.

引用

页码：163 / 166

页数：4

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