Photoluminescence study on defects in multicrystalline silicon

被引：5
作者：
Arguirov, T.
Seifer, W.
Jia, G.
Kittler, M.
机构：
[1] IHP, D-15236 Frankfurt, Germany
[2] Brandenburg Tech Univ Cottbus, D-03046 Cottbus, Germany
[3] IHP BTU Joint Lab, D-03046 Cottbus, Germany
来源：
SEMICONDUCTORS | 2007年 / 41卷 / 04期
关键词：
D O I：
10.1134/S1063782607040148
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on spatially resolved luminescence measurements on ribbon-grown silicon samples. It is found that the band-edge luminescence shows anomalous temperature behavior, namely an increase in the radiation intensity with temperature. Phosphorous diffusion gettering is found to enhance this effect. The anomalous lous temperature behavior is attributed to nonradiative recombination governed by shallow traps. A shift in the phonon replica of the band edge luminescence peak has been observed and associated with tensile stress.
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收藏
页码：436 / 439
页数：4
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