DC-RF performance improvement for strained 0.13 μm MOSFETs mounted on a flexible plastic substrate

被引：4

作者：

Kao, H. L. ^{[1
]}

Chin, Albert ^{[1
]}

Liao, C. C. ^{[1
]}

Tseng, Y. Y. ^{[1
]}

McAlister, S. P. ^{[2
]}

Chi, C. C. ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Univ Syst Taiwan, Nanosci Tech Ctr,Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Res Council Canada, Ottawa, ON, Canada

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan

来源：

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | 2006年

关键词：

RF noise; associated gain; MOSFET; plastic;

D O I：

10.1109/MWSYM.2006.249856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By applying 0.7% tensile strain to the flexible die of a 0.13 mu m thin-body (40 mu m) Si MOSFET mounted on plastic, both the DC and RF performance have been improved. The current I-d,I-sat was 14.3% higher, and f(T) increased from 103 to 118 GHz with NFmin decreasing from 0.89 to 0.75 dB at 10 GHz. These improvements are comparable with those for SiN-capped 90 nm strained-Si nMOS and consistent with device simulations. The approach has the advantages of better RF passive devices on the insulating plastic substrate and low cost.

引用

页码：2043 / +

页数：2

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