Determination of interface state density of metal-semiconductor field effect transistors

被引：0
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作者：
Chattopadhyay, P
Majumdar, L
机构：
来源：
INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES | 1997年 / 4卷 / 05期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A method for the determination of the interface state density of a metal-semiconductor field effect transistor is developed which requires an analysis of the temperature dependence of threshold voltage over a certain range of temperature. The method is used to estimate the values of interface state densities of GaAs MESFETs from the available experimental data on threshold voltage in the literature.
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页码：220 / 224
页数：5
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