Influence of a-Si:H/ITO interface properties on performance of heterojunction solar cells

被引：31

作者：

Lachaume, Raphael ^{[1
]}

Favre, Wilfried ^{[2
]}

Scheiblin, Pascal ^{[1
]}

Garros, Xavier ^{[1
]}

Nguyen, Nathalie ^{[2
]}

Coignus, Jean ^{[2
]}

Munoz, Delfina ^{[2
]}

Reimbold, Gilles ^{[1
]}

机构：

[1] CEA, LETI, MINATEC Campus,17 Rue Martyrs, F-38054 Grenoble 9, France

[2] CEA, INES RDI, F-73377 Le Bourget du Lac, France

来源：

PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2013) | 2013年 / 38卷

关键词：

heterojunction solar cells; transparent conductive oxide; indium tin oxide; hydrogenated amorphous silicon; contact; work function; simulation; optimization; WORK FUNCTION;

D O I：

10.1016/j.egypro.2013.07.345

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this study, we focus on the influence of the contact properties between Indium Tin oxide (ITO) and hydrogenated amorphous Silicon (a-Si: H) on the performance of a-Si: H/c-Si HeteroJunction (HJ) solar cells. We experimentally found that an increase of the (p) a-Si: H layer thickness can improve the open-circuit voltage (Voc) but also and especially the Fill-Factor (FF) of the cell. Thanks to simulation we propose an explanation of this unexpected increase. The deposition of ITO with low effective workfunction on (p) a-Si: H actually leads to a depletion of the emitter of the cell, which results in an increase of its effective activation energy and of its resistance affecting Voc and FF. Thanks to this new insight we give guidelines which can help to further optimize the HJ front stack. (C) 2013 The Authors. Published by Elsevier Ltd.

引用

页码：770 / 776

页数：7

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