Hexagonal boron nitride (h-BN) nanosheet as a potential hydrogen adsorption material: A density functional theory (DFT) study
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Chettri, B.
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Mizoram Univ, Pachhunga Univ Coll, Dept Phys, Phys Sci Res Ctr PSRC, Aizawl 796001, India
North Eastern Hill Univ, Dept Phys, Shillong, Meghalaya, IndiaMizoram Univ, Pachhunga Univ Coll, Dept Phys, Phys Sci Res Ctr PSRC, Aizawl 796001, India
Chettri, B.
[1
,2
]
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Patra, P. K.
[2
]
Hieu, Nguyen N.
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Duy Tan Univ, Inst Res & Dev, Da Nang, Vietnam
Duy Tan Univ, Fac Nat Sci, Da Nang, VietnamMizoram Univ, Pachhunga Univ Coll, Dept Phys, Phys Sci Res Ctr PSRC, Aizawl 796001, India
Hieu, Nguyen N.
[3
,4
]
Rai, D. P.
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Mizoram Univ, Pachhunga Univ Coll, Dept Phys, Phys Sci Res Ctr PSRC, Aizawl 796001, IndiaMizoram Univ, Pachhunga Univ Coll, Dept Phys, Phys Sci Res Ctr PSRC, Aizawl 796001, India
Rai, D. P.
[1
]
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[1] Mizoram Univ, Pachhunga Univ Coll, Dept Phys, Phys Sci Res Ctr PSRC, Aizawl 796001, India
[2] North Eastern Hill Univ, Dept Phys, Shillong, Meghalaya, India
[3] Duy Tan Univ, Inst Res & Dev, Da Nang, Vietnam
The hydrogen storage capacity of Boron Nitride nanosheet has been performed by using density functional theory (DFT). All the structural and electronic properties of a monolayer BN nanosheet are in well agreement with the previously reported results. Out of the four possible adsorption sites, centre is the most favourable adsorption site for H-2 molecule with binding energy similar to 0.212 eV/H-2. We have proceeded our calculations considering this adsorption site. The calculated direct band gap within GGA and HSE for pristine h-BN monolayer are found to be 4.669 eV and 5.63 eV, respectively. In our calculation the Hydrogen storage capacity of BN nanosheet was found to be 6.7 wt.% well within benchmark value (6.0%) with an average adsorption energy of (similar to 0.128 eV/H-2). Bader analysis revealed that the charge transfer from BN nanosheet to the H-2 molecule is very low (0.004-0.065 vertical bar e vertical bar) leading to weak binding of the H-2 molecule. The calculated desorption temperature was found to be low due to low average adsorption energy of the H-2 molecule. Also, upon increasing the number of H-2 molecule adsorption a feeble tuning of the band gap has been observed due to the contribution of the 1s orbital of H-2 molecule.
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Bhabha Atom Res Ctr, High Pressure & Synchrotron Radiat Phys Div, Mumbai, Maharashtra, India
Homi Bhabha Natl Inst, Mumbai, Maharashtra, IndiaBhabha Atom Res Ctr, High Pressure & Synchrotron Radiat Phys Div, Mumbai, Maharashtra, India
Chakraborty, Brahamananda
;
Ray, Pranoy
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Natl Inst Technol, Durgapur, IndiaBhabha Atom Res Ctr, High Pressure & Synchrotron Radiat Phys Div, Mumbai, Maharashtra, India
Ray, Pranoy
;
Garg, Nandini
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Bhabha Atom Res Ctr, High Pressure & Synchrotron Radiat Phys Div, Mumbai, Maharashtra, India
Homi Bhabha Natl Inst, Mumbai, Maharashtra, IndiaBhabha Atom Res Ctr, High Pressure & Synchrotron Radiat Phys Div, Mumbai, Maharashtra, India
机构:
Bhabha Atom Res Ctr, High Pressure & Synchrotron Radiat Phys Div, Mumbai, Maharashtra, India
Homi Bhabha Natl Inst, Mumbai, Maharashtra, IndiaBhabha Atom Res Ctr, High Pressure & Synchrotron Radiat Phys Div, Mumbai, Maharashtra, India
Chakraborty, Brahamananda
;
Ray, Pranoy
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Natl Inst Technol, Durgapur, IndiaBhabha Atom Res Ctr, High Pressure & Synchrotron Radiat Phys Div, Mumbai, Maharashtra, India
Ray, Pranoy
;
Garg, Nandini
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Bhabha Atom Res Ctr, High Pressure & Synchrotron Radiat Phys Div, Mumbai, Maharashtra, India
Homi Bhabha Natl Inst, Mumbai, Maharashtra, IndiaBhabha Atom Res Ctr, High Pressure & Synchrotron Radiat Phys Div, Mumbai, Maharashtra, India