A novel methodology on tuning work function of metal gate using stacking Bi-metal layers

被引：36

作者：

Jeon, IS ^{[1
]}

Lee, J ^{[1
]}

Zhao, P ^{[1
]}

Sivasubramani, P ^{[1
]}

Oh, T ^{[1
]}

Kim, HJ ^{[1
]}

Cha, D ^{[1
]}

Huang, J ^{[1
]}

Kim, MJ ^{[1
]}

Gnade, BE ^{[1
]}

Kim, J ^{[1
]}

Wallace, RM ^{[1
]}

机构：

[1] Univ Texas, Dept Elect Engn, Richardson, TX 75083 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419139

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate that the work function of a metal gate can be varied by inserting a very thin metal layer ("Metal A") between a thick metal ("Metal B") and the gate dielectric. The flat band voltage (V-FB) of the MOS (metaloxide-semiconductor) capacitor structure can be controlled within the range bounded by Metal A and Metal B individually, as demonstrated with various stacked bi-metal layers. For continuous thin layers, we speculate that the work function tunability may be due to the drastic change of the electron density in the thin continuous metal layer in direct contact with a bulk metal. This drastic change of electron density results in a larger junction depth than that expected for a bulk metal. Non-uniforrn thin layers also appear effective for workfunction tuning as well, and the observed VFB shift is attributed to the metal island formation at the dielectric/Metal A interface.

引用

页码：303 / 306

页数：4

共 6 条

[1]

Cabral C, 2004, 2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P184

[2] Stacked metal layers as gates for MOSFET threshold voltage control [J].