Low temperature growth of the epitaxial Ge layers on Si(100) by Hot Wire Chemical Vapor Deposition

被引：10

作者：

Matveev, S. A. ^{[1
,2
]}

Denisov, S. A. ^{[1
]}

Guseinov, D. V. ^{[1
]}

Trushin, V. N. ^{[1
]}

Nezhdanov, A. V. ^{[2
]}

Filatov, D. O. ^{[1
]}

Shengurov, V. G. ^{[1
]}

机构：

[1] Nizhniy Novgorod State Univ, Physicotech Res Inst, 23-3 Gagarin Ave, Nizhnii Novgorod, Nizhny Novgorod, Russia

[2] Nizhniy Novgorod State Univ, Dept Phys, Nizhnii Novgorod 603950, Russia

来源：

1ST INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN 2014 ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES | 2014年 / 541卷

基金：

俄罗斯基础研究基金会;

关键词：

GERMANIUM; PHOTODETECTORS; SILICON;

D O I：

10.1088/1742-6596/541/1/012026

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the present paper, we report on the growing of thick (similar to 0.2-3.0 mu m) epitaxial Ge/Si(100) layers by Hot Wire Chemical Vapor Deposition (HWCVD) at low growth temperatures (350 degrees C). The single crystal epitaxial Ge layers with low threading dislocation density (similar to 10(5) cm(-2)) and surface roughness (< 0.5 nm) have been obtained.

引用

页数：5

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