Ferroelectricity in boron-substituted aluminum nitride thin films

被引：120

作者：

Hayden, John ^{[1
]}

Hossain, Mohammad Delower ^{[1
]}

Xiong, Yihuang ^{[1
]}

Ferri, Kevin ^{[1
]}

Zhu, Wanlin ^{[1
]}

Imperatore, Mario Vincenzo ^{[2
]}

Giebink, Noel ^{[2
]}

Trolier-McKinstry, Susan ^{[1
]}

Dabo, Ismaila ^{[1
]}

Maria, Jon-Paul ^{[1
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Elect Engn & Comp Sci, University Pk, PA 16802 USA

来源：

PHYSICAL REVIEW MATERIALS | 2021年 / 5卷 / 04期

基金：

美国国家科学基金会;

关键词：

PIEZOELECTRIC RESPONSE;

D O I：

10.1103/PhysRevMaterials.5.044412

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This manuscript demonstrates ferroelectricity in B-substituted AlN thin films and a complementary set of first-principles calculations to understand their structure-property relationships. Al1-xBxN films are grown by dual-cathode reactive magnetron sputtering on (110)W/(001)Al2O3 substrates at 300 degrees C at compositions spanning x = 0 to x = 0.20. X-ray diffraction studies indicate a decrease in both the c and a lattice parameters with increasing B concentration, resulting in a decrease in unit cell volume and a constant c/a axial ratio of 1.60 over this composition range. Films with 0.02 <= x <= 0.15 display ferroelectric switching with remanent polarizations exceeding 125 mu C cm(-2) while maintaining band gap energies of >5.2 eV. The large band gap allows low frequency hysteresis measurement (200 Hz) with modest leakage contributions. At B concentrations of x > 0.15, c-axis orientation deteriorates and ferroelectric behavior is degraded. Density-functional theory calculations corroborate the structural observations and provide predictions for the wurtzite u parameter, polarization reversal magnitudes, and composition-dependent coercive fields.

引用

页数：9

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