Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures

被引：3

作者：

Shin, DO

Sardela, MR

Ban, SH

Lee, NE

Shim, KH

机构：

[1] Sungkyunkwan Univ, Ctr Adv Plasma Surface Technol, Dept Mat Engn, Suwon 440746, Kyunggi Do, South Korea

[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[3] Elect & Telecommun Res Inst, Semicond Elect, Taejon 305600, South Korea

来源：

APPLIED SURFACE SCIENCE | 2004年 / 237卷 / 1-4期

关键词：

silicon germanium; epitaxial cobalt disilicide; strain relaxation;

D O I：

10.1016/j.apsusc.2004.06.118

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Strain relaxation behaviors of the epitaxial CoSi2 (epi-CoSi2) and Si0.83Ge0.17 layers in epi-CoSi2/Si0.83Ge0.17/Si(0 0 1) and cap-Si/Si0.83Ge0.17/Si(0 0 1) structures were investigated by high-resolution X-ray diffraction (HR-XRD) analyses. Samples were treated at the temperature, T-A = 650-900 degreesC by rapid thermal annealing. Comparative measurements showed a different strain relaxation behavior in the SiGe layers with and without COSi2 layer. And Ge content and lattice mismatch in the SiGe film of the epi-CoSi2/Si0.83Ge0.17/Si(0 0 1) are smaller than those in the SiGe layer in cap-Si/SiGe/Si(0 0 1) possibly due to the diffusion of Ge into the tensile-stressed epi-CoSi2 layer to reduce the compressive stress in the SiGe layer at elevated temperature. The analyses of high-resolution omega-2theta scan spectra and reciprocal space mapping showed that epi-CoSi2 layer is under tensile residual stress and a significant strain relaxation starts at T-A = 900 degreesC indicating of thermal stability up to TA 850 degreesC. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：139 / 145

页数：7

共 11 条

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