GaSbBi/GaSb quantum well laser diodes

被引：36
作者：
Delorme, O. [1 ,2 ]
Cerutti, L. [1 ,2 ]
Luna, E. [3 ]
Narcy, G. [1 ,2 ]
Trampert, A. [3 ]
Tournie, E. [1 ,2 ]
Rodriguez, J. -B. [1 ,2 ]
机构：
[1] Univ Montpellier, IES, UMR 5214, F-34000 Montpellier, France
[2] CNRS, IES, UMR 5214, F-34000 Montpellier, France
[3] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 22期
关键词：
MOLECULAR-BEAM EPITAXY; BAND-GAP; GAAS1-XBIX; GROWTH; GAASBI;
D O I：
10.1063/1.4984799
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 mu m at 80K, and lasing under pulsed operation at room-temperature near 2.7 mu m. Published by AIP Publishing.
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页数：5
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