GaSbBi/GaSb quantum well laser diodes

被引：39

作者：

Delorme, O. ^{[1
,2
]}

Cerutti, L. ^{[1
,2
]}

Luna, E. ^{[3
]}

Narcy, G. ^{[1
,2
]}

Trampert, A. ^{[3
]}

Tournie, E. ^{[1
,2
]}

Rodriguez, J. -B. ^{[1
,2
]}

机构：

[1] Univ Montpellier, IES, UMR 5214, F-34000 Montpellier, France

[2] CNRS, IES, UMR 5214, F-34000 Montpellier, France

[3] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 22期

关键词：

MOLECULAR-BEAM EPITAXY; BAND-GAP; GAAS1-XBIX; GROWTH; GAASBI;

D O I：

10.1063/1.4984799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 mu m at 80K, and lasing under pulsed operation at room-temperature near 2.7 mu m. Published by AIP Publishing.

引用

页数：5

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