Surface studies of hydrogen etched 3C-SiC(001) on Si(001)

被引：28
作者：
Coletti, C. [1 ]
Frewin, C. L.
Saddow, S. E.
Hetzel, M.
Virojanadara, C.
Starke, U.
机构：
[1] Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 06期
关键词：
D O I：
10.1063/1.2768870
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The morphology and structure of 3C-SiC(001) surfaces, grown on Si(001) and prepared via hydrogen etching, are studied using atomic force microscopy (AFM), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES). On the etched samples, flat surfaces with large terraces and atomic steps are revealed by AFM. In ultrahigh vacuum a sharp LEED pattern with an approximate (5x1) periodicity is observed. AES studies reveal a "bulklike" composition up to the near surface region and indicate that an overlayer consisting of a weakly bound silicon oxide monolayer is present.
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