A monolithic high-efficiency 2.4-GHz 20-dBm SiGeBiCMOS envelope-tracking OFDM power amplifier

被引：162
作者：
Wang, Feipeng [1 ]
Kimball, Donald F.
Lie, Donald Y.
Asbeck, Peter M.
Larson, Lawrence E.
机构：
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
[2] Univ Calif San Diego, Calif Inst Telecommun & Informat Technol, La Jolla, CA 92093 USA
[3] Univ Calif San Diego, Ctr Wireless Commun, La Jolla, CA 92093 USA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2007年 / 42卷 / 06期
关键词：
envelope tracking; orthogonal frequency-division multiplexing (OFDM); power amplifier (PA); SiGe; wireless local-area network (WLAN);
D O I：
10.1109/JSSC.2007.897170
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.11g OFDM applications at 2.4 GHz. The 4-mm(2) die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.
引用
收藏
页码：1271 / 1281
页数：11
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