A monolithic high-efficiency 2.4-GHz 20-dBm SiGeBiCMOS envelope-tracking OFDM power amplifier

被引：160

作者：

Wang, Feipeng ^{[1
]}

Kimball, Donald F.

Lie, Donald Y.

Asbeck, Peter M.

Larson, Lawrence E.

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Univ Calif San Diego, Calif Inst Telecommun & Informat Technol, La Jolla, CA 92093 USA

[3] Univ Calif San Diego, Ctr Wireless Commun, La Jolla, CA 92093 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2007年 / 42卷 / 06期

关键词：

envelope tracking; orthogonal frequency-division multiplexing (OFDM); power amplifier (PA); SiGe; wireless local-area network (WLAN);

D O I：

10.1109/JSSC.2007.897170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.11g OFDM applications at 2.4 GHz. The 4-mm(2) die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.

引用

页码：1271 / 1281

页数：11