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Optoelectronic and Photovoltaic Properties of (NH4)3Bi2I9: A Perovskite-like Energy Material for Pb-free Perovskite Solar Cells
被引:23
作者:
Ahmad, Khursheed
[1
,4
]
Kumar, Praveen
[1
]
Kim, Haekyoung
[4
]
Mobin, Shaikh M.
[1
,2
,3
]
机构:
[1] Indian Inst Technol Indore, Dept Chem, Khandwa Rd, Indore 453552, India
[2] Indian Inst Technol Indore, Dept Biosci & Biomed Engn, Khandwa Rd, Indore 453552, India
[3] Indian Inst Technol Indore, Ctr Elect Vehicle & Intelligent Transport Syst CE, Khandwa Rd, Indore 453552, India
[4] Yeungnam Univ, Sch Mat Sci & Engn, Gyongsan 38541, South Korea
来源:
关键词:
Light absorber;
(NH4)(3)Bi2I9;
Numerical Simulation;
Perovskite-like material;
Pb-free perovskite solar cells;
LEAD-FREE PEROVSKITE;
HALIDE PEROVSKITES;
HYBRID PEROVSKITE;
FILMS;
DEPOSITION;
MORPHOLOGY;
BANDGAP;
D O I:
10.1002/cnma.202200061
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Recent few years have witnessed a tremendous surge in the design and fabrication of lead (Pb)-free perovskite or perovskite-like materials for the development of perovskite solar cells (PSCs). Bismuth halide perovskite materials such as (CH3NH3)(3)Bi2I9, Cs3Bi2I9 and FA(3)Bi(2)I(9) have been utilized as highly efficient perovskite light absorbers in terms of aerobic stability. Herein, we have investigated the optoelectronic properties of the (NH4)(3)Bi2I9 perovskite and employed as light absorber in the construction of Pb free PSCs. Solvent engineering approach was utilized to improve the photovoltaic performance of the (NH4)(3)Bi2I9 perovskite based PSCs. The probable HOMO and LUMO energy level values of the (NH4)(3)Bi2I9 perovskite were also investigated and the band gap of the (NH4)(3)Bi2I9 perovskite was found to be of 2.1 eV. The developed PSCs device exhibited the power conversion efficiency (PCE) of similar to 0.6%.
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页数:5
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